ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,402, issued on Nov. 3, was assigned to NXP USA Inc. (Austin, Texas). "Transistors with dielectric spacers and methods of fabrication thereof... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,403, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Gate sidewall structures of semic... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,404, issued on Nov. 3, was assigned to FAST SIC SEMICONDUCTOR Inc. (Hsinchu City, Taiwan). "Silicon carbide semiconductor device" was invent... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,405, issued on Nov. 3, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.). "High electron mobility transistor" was invented by Brett T.... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,407, issued on Nov. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device having dual trench structures and an impurity reg... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,408, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Vias and via rails for source/dra... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,409, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device having two-dimensionally ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,410, issued on Nov. 3, was assigned to WOLFSPEED INC. (Durham, N.C.). "Semiconductor power devices having multiple gate trenches and methods... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,411, issued on Nov. 3, was assigned to Volta Semiconductor Inc. (Cupertino, Calif.). "Semiconductor power device" was invented by Valerii Ne... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,412, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Semiconductor devices containing bi-metallic silicide ... Read More